JPH0324817B2 - - Google Patents
Info
- Publication number
- JPH0324817B2 JPH0324817B2 JP58030769A JP3076983A JPH0324817B2 JP H0324817 B2 JPH0324817 B2 JP H0324817B2 JP 58030769 A JP58030769 A JP 58030769A JP 3076983 A JP3076983 A JP 3076983A JP H0324817 B2 JPH0324817 B2 JP H0324817B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- thyristor
- resistor
- transistor
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004804 winding Methods 0.000 claims description 12
- 230000002265 prevention Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
- H03K17/732—Measures for enabling turn-off
Landscapes
- Protection Of Static Devices (AREA)
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58030769A JPS59158127A (ja) | 1983-02-28 | 1983-02-28 | ゲ−トタ−ンオフサイリスタのゲ−ト駆動回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58030769A JPS59158127A (ja) | 1983-02-28 | 1983-02-28 | ゲ−トタ−ンオフサイリスタのゲ−ト駆動回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59158127A JPS59158127A (ja) | 1984-09-07 |
| JPH0324817B2 true JPH0324817B2 (en]) | 1991-04-04 |
Family
ID=12312883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58030769A Granted JPS59158127A (ja) | 1983-02-28 | 1983-02-28 | ゲ−トタ−ンオフサイリスタのゲ−ト駆動回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59158127A (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6673801B2 (ja) * | 2016-10-24 | 2020-03-25 | ニチコン株式会社 | ゲートパルス発生回路およびパルス電源装置 |
-
1983
- 1983-02-28 JP JP58030769A patent/JPS59158127A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59158127A (ja) | 1984-09-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2898272B2 (ja) | 抵抗をブートストラップ・ダイオードに直列結合したモノリシック・ゲート・ドライバ・デバイス | |
| JPH08154375A (ja) | Ｍｏｓｆｅｔ同期整流用駆動回路 | |
| EP0677925A1 (en) | Three-terminal insulated-gate power electronic device with a variable-slope saturated output characteristic depending in a discontinuous way on the output current | |
| US3999086A (en) | Drive circuit for a controllable electronic switching element, for example, a power transistor | |
| US5535115A (en) | Output circuit of PWM inverter wherein floating time is reduced | |
| US4605865A (en) | Input drive apparatus for power transistor | |
| JPH0324817B2 (en]) | ||
| JPS5934068B2 (ja) | 電子スイツチ | |
| US4107552A (en) | Semiconductor switch | |
| JPS60107917A (ja) | 複合形半導体スイッチ | |
| US4105957A (en) | Full wave bridge power inverter | |
| JPH0235552B2 (en]) | ||
| JPH0311574B2 (en]) | ||
| JPS62100164A (ja) | 複合半導体装置 | |
| JPH0223112Y2 (en]) | ||
| JPH055699Y2 (en]) | ||
| JPH026304B2 (en]) | ||
| JPH07298613A (ja) | 電源装置 | |
| JPH0685496B2 (ja) | 静電誘導形自己消弧素子のゲート駆動回路 | |
| SU1203657A1 (ru) | Транзисторный ключ | |
| SU1499470A1 (ru) | Высоковольтный ключ | |
| JPH0317471Y2 (en]) | ||
| JPS61177815A (ja) | 半導体スイツチ素子の駆動回路 | |
| JPH0257376B2 (en]) | ||
| JPH06106019B2 (ja) | Ｄｃ−ｄｃコンバ−タ |